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Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : Mohamed Henini
  • Publsiher : Elsevier
  • Release : 27 June 2018
  • ISBN : 0128121378
  • Pages : 788 pages
  • Rating : 4/5 from 21 ratings
GET THIS BOOKMolecular Beam Epitaxy

Summary:
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community


Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : Mohamed Henini
  • Publisher : Elsevier
  • Release : 27 June 2018
GET THIS BOOKMolecular Beam Epitaxy

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new

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Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : Marian A. Herman,Helmut Sitter
  • Publisher : Springer Science & Business Media
  • Release : 08 March 2013
GET THIS BOOKMolecular Beam Epitaxy

This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of

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Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : Hajime Asahi,Yoshiji Horikoshi
  • Publisher : Wiley
  • Release : 22 April 2019
GET THIS BOOKMolecular Beam Epitaxy

Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE;

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Materials Fundamentals of Molecular Beam Epitaxy

Materials Fundamentals of Molecular Beam Epitaxy
  • Author : Jeffrey Y. Tsao
  • Publisher : Academic Press
  • Release : 02 December 2012
GET THIS BOOKMaterials Fundamentals of Molecular Beam Epitaxy

The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive

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Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : Robin F.C. Farrow
  • Publisher : Elsevier
  • Release : 31 December 1995
GET THIS BOOKMolecular Beam Epitaxy

In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized

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Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : John Wilfred Orton,Tom Foxon
  • Publisher : Oxford University Press, USA
  • Release : 17 October 2021
GET THIS BOOKMolecular Beam Epitaxy

The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were

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Molecular Beam Epitaxy and Heterostructures

Molecular Beam Epitaxy and Heterostructures
  • Author : L.L. Chang,K. Ploog
  • Publisher : Springer
  • Release : 13 October 2011
GET THIS BOOKMolecular Beam Epitaxy and Heterostructures

The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand

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Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : R. F. C. Farrow
  • Publisher : William Andrew
  • Release : 17 October 1995
GET THIS BOOKMolecular Beam Epitaxy

In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized

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Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy

Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy
  • Author : Nikolai N. Ledentsov
  • Publisher : Springer Science & Business Media
  • Release : 02 July 1999
GET THIS BOOKGrowth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy

The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

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Silicon-Molecular Beam Epitaxy

Silicon-Molecular Beam Epitaxy
  • Author : E. Kasper
  • Publisher : CRC Press
  • Release : 04 May 2018
GET THIS BOOKSilicon-Molecular Beam Epitaxy

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with

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Silicon Based Thin Film Solar Cells

Silicon Based Thin Film Solar Cells
  • Author : Roberto Murri
  • Publisher : Bentham Science Publishers
  • Release : 20 March 2013
GET THIS BOOKSilicon Based Thin Film Solar Cells

Silicon Based Thin Film Solar Cells explains concepts related to technologies for silicon (Si) based photovoltaic applications. Topics in this book focus on ‘new concept’ solar cells. These kinds of cells can make photovoltaic power production an economically viable option in comparison to the bulk crystalline semiconductor technology industry. A transition from bulk crystalline Si solar cells toward thin-film technologies reduces usage of active material and introduces new concepts based on nanotechnologies. Despite its importance, the scientific development and understanding

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Gas Source Molecular Beam Epitaxy

Gas Source Molecular Beam Epitaxy
  • Author : Morton B. Panish,Henryk Temkin
  • Publisher : Springer Science & Business Media
  • Release : 07 March 2013
GET THIS BOOKGas Source Molecular Beam Epitaxy

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and

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Silicon Molecular Beam Epitaxy

Silicon Molecular Beam Epitaxy
  • Author : E. Kasper,E.H.C. Parker
  • Publisher : Elsevier
  • Release : 02 December 2012
GET THIS BOOKSilicon Molecular Beam Epitaxy

This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic

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