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Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
  • Author : B. Jayant Baliga
  • Publsiher : Woodhead Publishing
  • Release : 17 October 2018
  • ISBN : 0081023073
  • Pages : 418 pages
  • Rating : 4/5 from 21 ratings
GET THIS BOOKWide Bandgap Semiconductor Power Devices

Summary:
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact


Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
  • Author : B. Jayant Baliga
  • Publisher : Woodhead Publishing
  • Release : 17 October 2018
GET THIS BOOKWide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field.


Wide Bandgap Semiconductor Electronics And Devices

Wide Bandgap Semiconductor Electronics And Devices
  • Author : Singisetti Uttam,Razzak Towhidur,Zhang Yuewei
  • Publisher : World Scientific
  • Release : 10 December 2019
GET THIS BOOKWide Bandgap Semiconductor Electronics And Devices

With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the


Characterization of Wide Bandgap Power Semiconductor Devices

Characterization of Wide Bandgap Power Semiconductor Devices
  • Author : Fei Wang,Zheyu Zhang,Edward A. Jones
  • Publisher : Institution of Engineering and Technology
  • Release : 10 November 2018
GET THIS BOOKCharacterization of Wide Bandgap Power Semiconductor Devices

Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization. It provides essential tools to assist researchers, advanced students and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications, and includes examples of applying the described methodology.


Wide Bandgap Power Semiconductor Packaging

Wide Bandgap Power Semiconductor Packaging
  • Author : Katsuaki Suganuma
  • Publisher : Woodhead Publishing
  • Release : 28 May 2018
GET THIS BOOKWide Bandgap Power Semiconductor Packaging

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power


Wide Bandgap Semiconductor-based Electronics

Wide Bandgap Semiconductor-based Electronics
  • Author : F. Ren,S. J. Pearton
  • Publisher : Anonim
  • Release : 02 March 2021
GET THIS BOOKWide Bandgap Semiconductor-based Electronics

Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development


Wide Bandgap Semiconductor Based Micro/Nano Devices

Wide Bandgap Semiconductor Based Micro/Nano Devices
  • Author : Jung-Hun Seo
  • Publisher : MDPI
  • Release : 25 April 2019
GET THIS BOOKWide Bandgap Semiconductor Based Micro/Nano Devices

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV)


Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications
  • Author : Yogesh Kumar Sharma
  • Publisher : BoD – Books on Demand
  • Release : 12 September 2018
GET THIS BOOKDisruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have


Wide Bandgap Semiconductors

Wide Bandgap Semiconductors
  • Author : Kiyoshi Takahashi,Akihiko Yoshikawa,Adarsh Sandhu
  • Publisher : Springer Science & Business Media
  • Release : 12 April 2007
GET THIS BOOKWide Bandgap Semiconductors

This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.


Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Nitride Wide Bandgap Semiconductor Material and Electronic Devices
  • Author : Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
  • Publisher : CRC Press
  • Release : 03 November 2016
GET THIS BOOKNitride Wide Bandgap Semiconductor Material and Electronic Devices

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.


Gallium Nitride and Silicon Carbide Power Devices

Gallium Nitride and Silicon Carbide Power Devices
  • Author : B Jayant Baliga
  • Publisher : World Scientific Publishing Company
  • Release : 12 December 2016
GET THIS BOOKGallium Nitride and Silicon Carbide Power Devices

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and



Simulation and Modelling of Electrical Insulation Weaknesses in Electrical Equipment

Simulation and Modelling of Electrical Insulation Weaknesses in Electrical Equipment
  • Author : Ricardo Albarracín Sánchez
  • Publisher : BoD – Books on Demand
  • Release : 17 October 2018
GET THIS BOOKSimulation and Modelling of Electrical Insulation Weaknesses in Electrical Equipment

Around 80% of electrical consumption in an industrialised society is used by machinery and electrical drives. Therefore, it is key to have reliable grids that feed these electrical assets. Consequently, it is necessary to carry out pre-commissioning tests of their insulation systems and, in some cases, to implement an online condition monitoring and trending analysis of key variables, such as partial discharges and temperature, among others. Because the tests carried out for analysing the dielectric behaviour of insulation systems are commonly



Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512

Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512
  • Author : Steven Denbaars,John Palmour,Michael Shur,Michael Spencer
  • Publisher : Cambridge University Press
  • Release : 01 September 1998
GET THIS BOOKWide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512

Wide-bandgap semiconductors have a long and illustrious history, starting with the first paper on SiC light-emitting diodes published in 1907. Since then, interest in wide-bandgap semiconductors has skyrocketed. Improved material quality, important breakthroughs both in SiC and GaN technologies, and the emergence of blue GaN-based lasers, have stimulated this progress. To provide a fairly complete picture of this important field, most of the work presented at the conference is included in the volume. In addition, invited papers present an excellent overview


Power Electronics and Motor Drives

Power Electronics and Motor Drives
  • Author : Bimal K. Bose
  • Publisher : Academic Press
  • Release : 25 November 2020
GET THIS BOOKPower Electronics and Motor Drives

Power Electronics and Motor Drives: Advances and Trends, Second Edition is the perfect resource to keep the electrical engineer up-to-speed on the latest advancements in technologies, equipment and applications. Carefully structured to include both traditional topics for entry-level and more advanced applications for the experienced engineer, this reference sheds light on the rapidly growing field of power electronic operations. New content covers converters, machine models and new control methods such as fuzzy logic and neural network control. This reference will